unisonic technologies co., ltd UTT10N10 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-714.a 10 a , 100v n-channel mosfet ? description the utc UTT10N10 is an n-channel enhancement mode power mosfet using utc?s advanced technology to provide the customers with a minimum on-stat e resistance, high switching speed and ultra low gate charge. it also can withstand high energy pulse in the avalanche and commutation mode. ? features * r ds(on) =142m ? @v gs = 10 v,i d =6.4a * high switching speed * low c rss (typically 20pf) * low gate charge(typically 12nc) ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UTT10N10l-tn3-r UTT10N10g-tn3-r to-252 g d s tape reel UTT10N10l-tn3-t UTT10N10g-tn3-t to-252 g d s tube note: pin assignment: g: gate d: drain s: source
UTT10N10 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-714.a ? absolute maximum ratings (unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 100 v gate-source voltage v gss 25 v drain current continuous i d 10 a pulsed i dm 40 a avalanche current i ar 12.8 a avalanche energy single pulsed e as 95 mj repetitive e ar 6.5 mj peak diode recovery dv/dt dv/dt 6 v/ns power dissipation p d 54 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 2.31 c/w ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 100 v drain-source leakage current i dss v ds =100v, v gs =0v 1 a gate-source leakage current forward i gss v gs =+25v, v ds =0v +100 na reverse v gs =-25v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =6.4a 142 180 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 345 1300 pf output capacitance c oss 100 pf reverse transfer capacitance c rss 20 pf switching parameters total gate charge q g v ds =80v, v gs =10v, i d =10a 12 110 nc gate to source charge q gs 2.5 nc gate to drain charge q gd 5.1 nc turn-on delay time t d ( on ) v dd =30v, v gs =10v, i d =10a, r g =25 ? 5 ns rise time t r 55 120 ns turn-off delay time t d ( off ) 20 ns fall-time t f 25 60 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 10 a maximum body-diode pulsed current i sm 40 a drain-source diode forward voltage v sd i s =10a, v gs =0v 1.5 v
UTT10N10 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-714.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
